Maher Nafouti, Ph.D.

Experience

• 

  Vossloh Schwabe

  Jul 2007 - Aug 2007

  Technicien
• 

  Institute of Mathematics and Information Science

  Jan 2011 - Jan 2013

  • Tutorial and lab session demonstrator: Measure and Instrumentation for undergraduate in Electronic

    Jan 2012 - Jan 2013

  • Lab session demonstrator: Measure and Instrumentation for undergraduate in Electronic

    Jan 2011 - Jan 2012
• 

  Université de Monastir

  Sept 2011 - Jun 2013

  Optical characterization Engineer

  - Fabrication and characterization of Optical devices (laser, diode...) and integrated circuits based on III-V materials

• 

  Ecole centrale Aix Marseille université

  Jan 2013 - Jan 2015

  Tutorial demonstrator: Getting started with Atomic Force Microscopy
• 

  IM2NP

  Sept 2013 - Sept 2016

  Nanophotonics Engineer

  • Develop new method to control light for nanophotonics applications based on silicon or silicon germanium. -Manipulating light with silicon is of fundamental importance for designing optoelectronic devices with essential applications in solar energy, signal processing, and light sources. Light propagates into Si optical waveguides whose typical size remains above a few micrometers. Si-based Mie resonators emerged two years ago as a promising alternative to manipulating light with subwavelength resonant scatterers. This novel class of photonic resonators combines the advantages of classical silicon waveguides and plasmonics: they are lossless, subwavelength in size, and they resonantly interact with light thanks to the excitation of low orders electric and magnetic modes in the nanoparticle. Along My thesis, I demonstrated the capabilities of a dewetting-based process to fabricate Si-based resonators over centimeter scales starting from commercial silicon on insulator (SOI) substrates featuring an ultra-thin Si layer. • Complex dewetting scenarios of ultrathin silicon films (SOI) for large-scale nanoarchitectures compatible with CMOS back-end process (Results in the state of the art)• Fabrication of nanophotonic structures for optical nanocircuits based on silicon and silicon germanium • Floating gate memory based on nanocrystal of silicon and silicon germanium • Optical characterization of SiGe quantum dots and quantum wells nanostructures• Epitaxy fabrication ( MOCVD/MBE) of optical devices based on silicon and silicon germanium. SiGe band gap engineering . strain relaxation in SiGe nanostructres (2D/3D)Technical Skills:• Clean room environnement• Molecular beam epitaxy• Focused ion beam• Rapid thermal processing• Electron microscopy and analysis• Atomic force microscopy• Femtosecond time resolved spectroscopy • Photoluminescence• Raman spectroscopy Show less

• 

  STMicroelectronics

  Jun 2016 - Sept 2018

  Failure analysis Engineer

  Project 1: Smart Analysis Methods for 3D Integration in Advanced Microsystems and Corresponding Materials (SAM3). Main goal: Characterization and failure analysis of semiconductors devices based on wide band gap materials Companies Partners: Infineon Technologies (Munich), Bosch (Reutlingen), ST (Tours) and Thales.Project 2: Combined epitaxy optimizations for GaN on silicon Microwave power devices Partners: IEMN Lille (Institute of Electronics, Microelectronics and Nanotechnology) and CNRS-CRHEASkills:- Semiconductor device Failure analysis- Advanced power electronic devices based on Gallium Nitride and Silicon Carbide (GaN, SiC) - Electrical characterization of semiconductors materials and devices using scanning probe microscopy - Development of power semiconductor by quantitative nanoscale dopant imaging- TEM Lamella preparation by focused ion beam Show less

• 

  CNRS - Centre national de la recherche scientifique

  Oct 2018 - Mar 2019

  Optical Research Scientist

  Project: Optical and electrical spin detection in defect engineered GaAs-based semiconductors: towards an electrical photon helicity detectorSkills: -Optical spectroscopy on semiconductor nanostructures - III-V semiconductors for spintronic application -Spin dynamics in structures based on III-V materials -Ion implantation using Focused Ion Beam (FIB) - Photoconductivity

• 

  X-FAB

  Apr 2019 - now

  • Front-end integration Engineer 0.18 node technology for automotive application • Responsible for process changes, risk assessments and Design of Experiments (DOEs).• Process leader for CMP/ STI/DTI/ implant and HV devices modules • Process optimization and improvement for the new products on silicon or SOI for different customers• Providing solutions and root cause for various manufacturing issues using many methods• Data analysis using Jmp and R • Dealing with a wide range of problems involving knowledge of dry etch, CMP, thin films, lithography • Following sustainable manufacturing products• 8D/5W methodology for managing customer complaints• Process improvement for different modules (Active, deep trench etch, CMP, implant…)• Experience in statistical process control (SPC) data analysis• Leader of segment team, working groups and task forces• Identify issues and recommend solutions to improve performance and yield based on in-line inspection (defect scan, in-line data) or sort final wafer test (SWT)• Technology transfer: leader for STI , CMP , implants and HV modules Show less

  • Photonics Program Manager

    Jan 2024 - now

  • Principal Photonics Process Integration Engineer

    Jun 2023 - Dec 2023

  • Staff Process Integration Engineer

    Apr 2019 - May 2023