Dr. Himanshu Karan

Education

• 

  Institute of Radio Physics and Electronics, University of Calcutta

  2013 - 2020

  Ph. D. Nitride based light-emitting diodes

  Publications:SCI Journals: 1. H. Karan et al. "Analysis of luminescence spectra of rectangular and trapezoidal InGaN/GaN multiple quantum wells under varying bias conditions," Opt. Mater., 86, 247-255, 2018 (IF 2.779).2. H. Karan et al. "Improved performance of InGaN/GaN MQW LEDs with trapezoidal wells and gradually thinned barrier layers towards anode," Opt. Commun. 400, 89-95, 2017 (IF 2.125).3. H. Karan et al. "Step multiple quantum well enabled performance enhancement in… Show more Publications:SCI Journals: 1. H. Karan et al. "Analysis of luminescence spectra of rectangular and trapezoidal InGaN/GaN multiple quantum wells under varying bias conditions," Opt. Mater., 86, 247-255, 2018 (IF 2.779).2. H. Karan et al. "Improved performance of InGaN/GaN MQW LEDs with trapezoidal wells and gradually thinned barrier layers towards anode," Opt. Commun. 400, 89-95, 2017 (IF 2.125).3. H. Karan et al. "Step multiple quantum well enabled performance enhancement in InGaN/GaN based light-emitting diodes," Microsyst. Technol. 26, 3055-3062, 2020 (IF 1.737).4. H. Karan et al "Monolithic high performance InGaN/GaN white LEDs with a tunnel junction cascaded yellow and blue light-emitting structures," Opt. Mater, 77, 104-110, 2018 (IF 2.779).International Conferences:1. H. Karan et al., 4th International Conference on Microelectronics, Circuits and Systems, 2017 . 2. H. Karan et al., 1st International Conference on Communication, Devices and Computing, 2017. Show less

• 

  Institute of Radio Physics and Electronics, University of Calcutta

  2011 - 2013

  M. Tech. Radio Physics and Electronics (Specialization in Nanoelectronics)
• 

  University Institute of Technology, The University of Burdwan

  2007 - 2011

  B. E Electronics and Communication Engineering