
Kawser Ahmed
Design Engineer

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About me
Device Engineer at Intel Corporation
Education

Rensselaer Polytechnic Institute
2013 - 2017Doctor of Philosophy (Ph.D.) Electrical Engineering 3.96Activities and Societies: Soccer, Kayaking, Hiking, IEEE

Bangladesh University of Engineering and Technology
2007 - 2012Bachelor’s Degree Electrical and Electronics Engineering 3.87Activities and Societies: Soccer, Travel, IEEE
Experience

Fastrack Anontex Ltd.
Apr 2012 - Oct 2012Design EngineerCustom IC design and Structured ASIC design.

Electricity Generation Company of Bangladesh LTD. (EGCB LTD.)
Nov 2012 - Jul 2013Assistant ManagerAssistant Manager (Electrical) in an under-construction 360 MW combined cycle power plant

Rensselaer Polytechnic Institute
Aug 2013 - Jul 2017PHD Researcher• CVD Epitaxy on sapphire, planar and high AR 3D Si microstructures, with XRD, XPS, and band-gap characterization.• Developed ICP-RIE etching for hBN• Developed a complete dry fabrication process for hBN based neutron detectors.• Demonstrated neutron detectors using hBN grown on vertical Si.• A 15 µm thick natural hBN (w/ 20% B-10) based detector yielded an efficiency of 4.7%, equivalent to 21.4% with enriched hBN (w/ 100% B-10)

Intel Corporation
Aug 2017 - nowStaff Device EngineerJob responsibilities include driving state of the art Gate all around transistor development for Intel 18A technology node.
Licenses & Certifications
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Country Focused Training Program in Capacity Development
Japan International Cooperation Agency (JICA)Nov 2012
Honors & Awards
- Awarded to Kawser AhmedAllen B. Dumont Award Rensselaer Polytechnic Institute Apr 2017 Outstanding graduate research achievement award
- Awarded to Kawser Ahmed2nd Prize in ADI Design Contest Analog Devices Inc. Nov 2015 Awarded for the design of an operational transconductance amplifier (OTA) in IBM Cmrf8sf technology.
- Awarded to Kawser AhmedBest Poster Award for IC Fabrication Class Project Prof. Paul Chow Apr 2014 Worked at RPI MNCR cleanroom under the course "IC Fabrication Laboratory" with 4 other graduate students for the fabrication of PN diodes, MOSFETs, MOS capacitors, Kelvin structures, Van der Paaw structures and TLM patterns on Silicon wafers Characterized fabricated devices using I-V and C-V measurements and explained the differences in performance between theoretical and fabricated devices.
- Awarded to Kawser AhmedDean's List Award Bangladesh University of Engineering and Technology (BUET), Bangladesh Awarded for obtaining minimum GPA of 3.75 in every academic year other than the freshman year at BUET.
- Awarded to Kawser AhmedUniversity Merit Scholarship, awarded for academic excellence Bangladesh University of Engineering and Technology. in 5 out of 8 academic semesters.
Languages
- beBengali
- enEnglish
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