Mark Lu

Experience

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  Intel Corporation

  Jul 2007 - Sept 2007

  Intern

  Working at Intel China research center, CTL group.1.Study the UWB spectral regulation technology.2. Analysis the coexistence and interference issues between UWB and FS（FSS）.3.Use Matlab to do the simulation and write the report to my mentor.

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  Rda Microelectronics Inc

  Oct 2007 - Dec 2013

  Senior RFIC Design Engineer

  I was working in the power amplifier design team, mainly focus on below, 1.SOI RF switch. IBM/GSMC 0.18um 7RFSOI process, include a.SP2T, SP3T, DPDT switch module with GPIO control for 3G/WIFI application. b.SP4T — SP8T switch module for 2G/3G/4G antenna diversity or LTE application. c.SP12T, SP16T switch with MIPI control and LFP for multimode handset application. d.SP6T and SP8T switch for FEM. e.SOI RF ESD protection. 2.CMOS PA Controller. Include bandgap, LDO, ESD, comparator, logic, buffer, etc. a.GSM/EDGE/3G PA controller. SMIC/TSMC 0.35um CMOS process. b.Low cost GSM controller. SMIC/TSMC 0.35um CMOS process. c.Decoder for RF switch. SMIC/TSMC 0.35um CMOS and IBM 7RFSOI process. d.Negative voltage generator for switch. IBM/GSMC 0.18um 7RFSOI process. 3.Power amplifier (PA ) and LNA a.100MHz~2500MHz wide band and high linearity PA. WIN/Triquint 0.5um GaAS process. b.SiGe BiCMOS GSM/RFID PA. IBM 5PAE / Jazz SBC18 process c.SOI GPS LNA. IBM 0.18um 7RFSOI process. d.Low cost cmos pa.Mass productoin expericences:1. RDA SW36 SP3T RF siwtch.The major customer is Sumsang. The total shipments were more than 100kk(100000000) pcs.In charge of whole chip design, include the schematic, layout, debug, datasheet and application note.2.RDA6231 is a high-power, high-efficiency dual-band front-end Module. This device is designed for EGSM900 and DCS1800 handheld digital cellular equipment. The module consists of dual band power amplifiers and dual band antenna switch. The power amplifiers, switch and their controller are fabricated with GaAs HBT, GaAs PHEMT and CMOS respectively.Responsibilities: In charge of CMOS controller and SP6T switch design, include the schematic and layout. The SP6T switch was fabricated on a GaAs PHEMT die and the controller was fabricated on a CMOS die.Achievement: This product has been mass production. The total shipments were more than 500kk(500000000) pcs. 收起

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  Etra Semiconductor (Suzhou) Co., Ltd.

  Jan 2014 - Feb 2017

  Product Manager

  At Etra Semiconductor, I served as the SOI Product Manager, responsible for product planning, development, and customer communication, ensuring product specifications and timelines were met. I worked closely with the engineering and manufacturing teams to optimize product design, improve performance, and ensure customer requirements were met.

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  Beijing OnMicro Electronics Co., Ltd

  Feb 2017 - now

  Senior Principal Engineer

  At OnMicro, I am primarily responsible for designing and developing RF front-end modules (RFFE) and related controller chips. I lead the R&D of CMOS controllers, power management, current sources, and various RF switch modules, ensuring they meet the high performance and quality standards required by communication devices. I have led several key projects for 2G/3G/4G/5G RF front-end integration, focusing on high-frequency and low-power requirements. I work closely with cross-functional teams, coordinating production, quality, and engineering departments to ensure smooth project progress and timely delivery. Additionally, I am involved in product validation, testing, and debugging, providing customized technical support and solutions to clients. 收起