Qi Cheng

Education

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  Huazhong University of Science and Technology

  2007 - 2011

  Bachelor's degree Electrical and Electronics Engineering
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  University of Delaware

  2016 - 2021

  Doctor of Philosophy - PhD Electrical and Electronics Engineering

  Activities and Societies: Worked as Teaching Assistant • ELEG 309 Electronic Circuit Analysis (Prof. Vishal Saxena) • ELEG 340 Solid-State Electronics (Prof. Yuping Zeng) Research Assistant • Developed a compact model and Sentaurus TCAD simulation platform for the vertical tunneling field-effect transistor.• Developed a RF simulation platform for InAs FinFET, quantum-well and gate-all-around MOSFET. The resulting RF parameters such as S parameters, h21 and MUG are verified with experimental data.• Co-worked with colleagues in the fabrication of InAs MOSFET.

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  Peking University

  2011 - 2014

  Master's degree Electrical and Electronics Engineering

  Activities and Societies: Research Assistant • Worked on TCAD simulation and compact modeling of gate-all-around nanowire MOSFET.• Studied the process variability of self-aligned multiple patterning (SAMP), and SAMP variations induced device and circuit performance fluctuations.