Maaz Qureshi

University of Eastern Finland

Doctoral Thesis: Waveguides integrated with 2D materials for the fabrication of efficient photodetectors.Description: Waveguides are simulated using Lumerical software to obtain the best waveguides structural designs. Waveguides are fabricated, dry-etched on SOI (Silicon-on-Insulator) platform and 2D materials are transferred on top of the waveguides to increase the light-matter interaction. Electrical contacts are patterned using Ebeam to perform the electrical and photodetection… Show more Doctoral Thesis: Waveguides integrated with 2D materials for the fabrication of efficient photodetectors.Description: Waveguides are simulated using Lumerical software to obtain the best waveguides structural designs. Waveguides are fabricated, dry-etched on SOI (Silicon-on-Insulator) platform and 2D materials are transferred on top of the waveguides to increase the light-matter interaction. Electrical contacts are patterned using Ebeam to perform the electrical and photodetection measurements. Waveguides are characterized using a custom-built setup to ensure the proper propagation of light in the waveguide. Show less

University of Eastern Finland

Master's Thesis: Fabrication and characterization of CVD grown 2D materials for FET transistors.Description: Different 2D materials such as MoS2, CrS2, FeS2, TiS2, etc., were synthesized using chemical vapour deposition (CVD) process and characterized using SEM-EDS, Micro-Raman, SNOM and Linkam measurement setups. Thin films of 2D materials were transferred on Si/SiO2 substrate and connectors of the FET transistor (gate, source and drain) were patterned using electron beam lithography… Show more Master's Thesis: Fabrication and characterization of CVD grown 2D materials for FET transistors.Description: Different 2D materials such as MoS2, CrS2, FeS2, TiS2, etc., were synthesized using chemical vapour deposition (CVD) process and characterized using SEM-EDS, Micro-Raman, SNOM and Linkam measurement setups. Thin films of 2D materials were transferred on Si/SiO2 substrate and connectors of the FET transistor (gate, source and drain) were patterned using electron beam lithography (EBL). SNOM, Micro-Raman and Linkam measurement setups were used for the optical characterization to determine the effect of temperatures (from 25°C to -196°C) on the Photoluminescence measurements.Master's degree projects: 1) Fabrication and characterization of asymmetric slab waveguide.2) Diffraction regimes and Talbot effect.3) Radiometric and Photometric properties of LED. Show less

Ghulam Ishaq Khan Institute of Engineering Sciences and Technology